1 2 3 collect or 3 1 base 2 emitter maximum ra tings the rmal characteristics device marking off characteristics rating symbol v alue unit v ceo 40 vdc v cbo 60 vdc v ebo 6.0 vdc i c 600 madc characteristic symbol max unit p d 300 1.8 t h e r m a l r e s i s t a n c e , j u n c t i o n t o a m b i e n t 556 p d 3 00 2.4 thermal resistance, junction to ambient 417 junction and storage t emperature t j , t s t g -55 to +150 MMBT4401 = 2x symbol min max unit v (br)ceo 40 v (br)cbo 60 v (br)ebo 6.0 i bev 0.1 i cex 0.1 http://www.secosgmbh.com elektronische bauelemente k j c h l a b s g v 3 1 2 d top view dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 1. fr 5 = 1.0 x 0.75 x 0.062 in. 2 . alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3 . pulse t est: pulse width =< 300 m s, duty cycle =< 2.0%. c c/w mw mw/ c c/w mw mw/ o o o o o c rq ja rq ja m adc m adc MMBT4401 e e e e e any changing of specification will not be informed individual npn silicon switching transistor electrical characteristics (t a = 25 c unless otherwise noted) characteristic total device dissipation fr 5 board (1) t a = 25 c derate above 25 c total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c collector current e continuous collector emitter voltage collector base voltage emitter base voltage collector emitter breakdown voltage (3) (i c = 1.0 madc, i b = 0) collector base breakdown voltage (i c = 0.1 madc, i e = 0) emitter base breakdown voltage (i e = 0.1 madc, i c = 0) base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) vdc vdc vdc 01 -jun-2004 rev. b page 1 of 5 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBT4401 npn silicon switching transistor electrical characteristics (continued) (t a = 25 c unless otherwise noted) characteristic symbol min max unit on characteristics (3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 20 40 80 100 40 e e e 300 e e collector emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) e e 0.4 0.75 vdc base emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 e 0.95 1.2 vdc small signal characteristics current gain e bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 250 e mhz collectorbase capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb e 6.5 pf emitterbase capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb e 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.0 15 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 4 small signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 40 500 e output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 30 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, t d e 15 ns rise time ( cc , eb , i c = 150 madc, i b1 = 15 madc) t r e 20 ns storage time (v cc = 30 vdc, i c = 150 madc, t s e 225 ns fall time ( cc , c , i b1 = i b2 = 15 madc) t f e 30 ns 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +16 v 2.0 v < 2.0 ns 0 1.0 to 100 m s, duty cycle 2.0% 1.0 k w + 30 v 200 w c s * < 10 pf +16 v 14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1.0 k w + 30 v 200 w c s * < 10 pf 4.0 v http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 2 of 5
any changing of specification will not be informed individual MMBT4401 npn silicon switching transistor figure 3. capacitances 7.0 10 20 30 5.0 figure 4. charge data 0.1 2.0 5.0 10 20 2.0 30 50 3.0 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 5. turnon time 20 30 50 5.0 10 7.0 figure 6. rise and fall times figure 7. storage time figure 8. fall time 20 30 50 70 100 10 5.0 7.0 c obo q t q a 25 c 100 c transient characteristics 3.01.00.50.30.2 0.3 0.2 30 c cb 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v eb = 2.0 v t d @ v eb = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 t r t f 10 20 50 70 100 200 300 500 30 100 200 30 70 50 300 10 20 50 70 100 200 300 500 30 t s = t s 1/8 t f i b1 = i b2 i c /i b = 10 to 20 v cc = 30 v i b1 = i b2 i c /i b = 20 i c /i b = 10 capacitance (pf) reverse voltage (v) t, time (ns) i c , collector current (ma) q, charge (nc) i c , collector current (ma) t s ', storage time (ns) i c , collector current (ma) i c , collector current (ma) i c , collector current (ma) tf', fall time (ns) t, time (ns) http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 3 of 5
any changing of specification will not be informed individual MMBT4401 npn silicon switching transistor 6.0 8.0 10 0 4.0 2.0 0.1 2.0 5.0 10 20 50 1.00.50.20.01 0.02 0.05 100 figure 9. frequency effects smallsignal characteristics noise figure v ce = 10 vdc, t a = 25 c bandwidth = 1.0 hz i c = 1.0 ma, r s = 150 w i c = 500 m a, r s = 200 w i c = 100 m a, r s = 2.0 k w i c = 50 m a, r s = 4.0 k w r s = optimum rs = source rs = resistance 100 k 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 6.0 8.0 10 0 4.0 2.0 figure 10. source resistance effects f = 1.0 khz i c = 50 m a i c = 100 m a i c = 500 m a i c = 1.0 ma h p a r a m e t e r s v c e = 1 0 v d c , f = 1 . 0 k h z , t a = 2 5 5 c t h i s g r o u p o f g r a p h s i l l u s t r a t e s t h e r e l a t i o n s h i p b e t w e e n h f e a n d o t h e r a h o p a r a m e t e r s f o r t h i s s e r i e s o f t r a n s i s t o r s . t o o b t a i n t h e s e c u r v e s , a h i g h g a i n a n d a l o w g a i n u n i t w e r e s e l e c t e d f r o m t h e m m b t 4 4 0 1 l i n e s , a n d t h e s a m e u n i t s w e r e u s e d t o d e v e l o p t h e c o r r e s p o n d i n g l y n u m b e r e d c u r v e s o n e a c h g r a p h . f i g u r e 1 1 . c u r r e n t g a i n 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 1 0 0 2 0 0 2 0 7 0 5 0 3 0 0 f i g u r e 1 2 . i n p u t i m p e d a n c e 5 0 k 5 0 0 3 0 5 . 0 7 . 0 2 0 k 1 0 k 5 . 0 k 2 . 0 k 1 . 0 k 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 5 . 0 7 . 0 f i g u r e 1 3 . v o l t a g e f e e d b a c k r a t i o 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 0 . 2 1 0 1 0 0 1 . 0 5 . 0 7 . 0 5 0 2 0 1 0 5 . 0 2 . 0 7 . 0 5 . 0 3 . 0 2 . 0 1 . 0 0 . 7 0 . 5 0 . 3 0 . 1 0 . 2 0 . 5 0 . 7 1 . 0 2 . 0 3 . 0 1 0 0 . 3 5 . 0 7 . 0 h r e , v o l t a g e f e e d b a c k r a t i o ( x 1 0 - 4 ) i c , c o l l e c t o r c u r r e n t ( m a ) i c , c o l l e c t o r c u r r e n t ( m a ) h o e , o u t p u t a d m i t t a n c e ( m h o s ) m m b t 4 4 0 1 u n i t 1 m m b t 4 4 0 1 u n i t 2 m m b t 4 4 0 1 u n i t 1 m m b t 4 4 0 1 u n i t 2 f i g u r e 1 4 . o u t p u t a d m i t t a n c e h f e , c u r r e n t g a i n i c , c o l l e c t o r c u r r e n t ( m a ) h j e , i n p u t i m p e d a n c e ( o h m s ) i c , c o l l e c t o r c u r r e n t ( m a ) m m b t 4 4 0 1 u n i t 1 m m b t 4 4 0 1 u n i t 2 m m b t 4 4 0 1 u n i t 1 m m b t 4 4 0 1 u n i t 2 nf, noise figure (db) nf, noise figure (db) rs, source resistance (ohms) f, frequency (khz) http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 4 of 5
any changing of specification will not be informed individual MMBT4401 npn silicon switching transistor static characteristics figure 15. dc current gain figure 16. collector saturation region 0.4 0.6 0.8 1.0 0.2 0.1 0.5 2.0 3.0 50 0.2 0.3 0 1.00.7 5.0 7.0 i c = 1.0 ma t j = 25 c 0.070.050.030.020.01 10 ma 100 ma 10 20 30 500 ma 0.3 0.5 0.7 1.0 3.0 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.00.7 500 30205.0 7.0 t j = 125 c 55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 17. aono voltages 0.4 0.6 0.8 1.0 0.2 figure 18. temperature coefficients 1.0 2.0 5.0 10 20 50 0 100 0.5 0 + 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 10 v vc for v ce(sat) vb for v be 200 0.1 0.2 0.5 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 h fe , normalized current gain i c , collector current (ma) v ce , collector-emitter voltage (v) ib, base current (ma) voltage (v) i c , collector current (ma) i c , collector current (ma) coefficient (mv/ ) c http://www.secosgmbh.com elektronische bauelemente 01 -jun-2004 rev. b page 5 of 5
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